Title:
MAGNETORESISTIVE EFFECT ELEMENT
Document Type and Number:
WIPO Patent Application WO/2016/158923
Kind Code:
A1
Abstract:
This magnetoresistive effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer sandwiched between the first and second ferromagnetic metal layers, wherein: the tunnel barrier layer has a spinel structure represented by the compositional formula AB2Ox(0
Inventors:
SASAKI TOMOYUKI (JP)
Application Number:
PCT/JP2016/060056
Publication Date:
October 06, 2016
Filing Date:
March 29, 2016
Export Citation:
Assignee:
TDK CORP (JP)
International Classes:
H01L43/10; G01R33/09; G11B5/39; H01F10/14; H01F10/16; H01F10/26; H01F10/32; H01L21/8246; H01L27/105; H01L29/82; H01L43/08
Domestic Patent References:
| WO2013099740A1 | 2013-07-04 | |||
| WO2009157100A1 | 2009-12-30 | |||
| WO2007126071A1 | 2007-11-08 |
Foreign References:
| JP2013175615A | 2013-09-05 | |||
| JP2014203931A | 2014-10-27 |
Other References:
See also references of EP 3279959A4
Attorney, Agent or Firm:
TANAI Sumio et al. (JP)
Sumio Tanai (JP)
Sumio Tanai (JP)
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