Title:
MAGNETORESISTIVE EFFECT ELEMENT
Document Type and Number:
WIPO Patent Application WO/2018/061710
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a magnetoresistive effect element (10) having a larger magnetoresistive effect. A magnetoresistive effect element according to the present invention comprises a substrate (11), a first ferromagnetic electrode (13), a second ferromagnetic electrode (15), a non-magnetic metal (14) that is sandwiched between the first ferromagnetic electrode and the second ferromagnetic electrode, and a base layer (12) for a laminate (18) that is configured of the first ferromagnetic electrode, the second ferromagnetic electrode and the non-magnetic metal. This magnetoresistive effect element is characterized in that: the laminate is formed on the base layer; and the base layer is configured by sequentially laminating an alloy layer (12a) and a non-magnetic metal layer (12b) on the substrate in this order from the substrate side.
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Inventors:
INUBUSHI KAZUUMI (JP)
NAKADA KATSUYUKI (JP)
NAKADA KATSUYUKI (JP)
Application Number:
PCT/JP2017/032442
Publication Date:
April 05, 2018
Filing Date:
September 08, 2017
Export Citation:
Assignee:
TDK CORP (JP)
International Classes:
H01L43/10; G01R33/09; G11B5/39; H01F10/32; H01L21/8239; H01L27/105; H01L43/08
Domestic Patent References:
| WO2016017612A1 | 2016-02-04 |
Foreign References:
| US20150340598A1 | 2015-11-26 | |||
| JP2017103419A | 2017-06-08 |
Other References:
JIAMIN CHEN ET AL.: "Realization of high quality epitaxial currnt-perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer", APL MATERIALS, vol. 4, 20 May 2016 (2016-05-20), pages 056104 - 1-056104-7, XP012207704, DOI: doi:10.1063/1.4950827
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