Title:
MAGNETORESISTIVE ELEMENT AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/037777
Kind Code:
A1
Abstract:
This magnetoresistive element 10 is obtained by laminating a lower electrode 31, a first base layer 21A formed of a non-magnetic material, a storage layer 22 having perpendicular magnetic anisotropy, an intermediate layer 23, a magnetization fixed layer 24 and an upper electrode 32. The storage layer 22 is formed of a magnetic material that has at least a 3d transition metal element and elemental boron in composition. This magnetoresistive element 10 additionally comprises a second base layer 21B between the lower electrode 31 and the first base layer 21A; and the second base layer 21B is formed of a material that contains at least one of the elements constituting the storage layer in composition.
Inventors:
KARIYADA EIJI (JP)
Application Number:
PCT/JP2017/026098
Publication Date:
March 01, 2018
Filing Date:
July 19, 2017
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L21/8239; G11B5/39; H01F10/16; H01F10/32; H01L27/105; H01L29/82; H01L43/08; H01L43/10
Domestic Patent References:
| WO2015041890A1 | 2015-03-26 | |||
| WO2012086183A1 | 2012-06-28 |
Foreign References:
| JP2013048210A | 2013-03-07 | |||
| JP2014513866A | 2014-06-05 | |||
| JP2015176933A | 2015-10-05 | |||
| JP2014241449A | 2014-12-25 |
Attorney, Agent or Firm:
YAMAMOTO Takahisa et al. (JP)
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