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Title:
MAGNETORESISTIVE ELEMENT AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/037777
Kind Code:
A1
Abstract:
This magnetoresistive element 10 is obtained by laminating a lower electrode 31, a first base layer 21A formed of a non-magnetic material, a storage layer 22 having perpendicular magnetic anisotropy, an intermediate layer 23, a magnetization fixed layer 24 and an upper electrode 32. The storage layer 22 is formed of a magnetic material that has at least a 3d transition metal element and elemental boron in composition. This magnetoresistive element 10 additionally comprises a second base layer 21B between the lower electrode 31 and the first base layer 21A; and the second base layer 21B is formed of a material that contains at least one of the elements constituting the storage layer in composition.

Inventors:
KARIYADA Eiji (4000-1 Oaza Haramizu, Kikuyo-machi, Kikuchi-gu, Kumamoto 02, 〒8691102, JP)
Application Number:
JP2017/026098
Publication Date:
March 01, 2018
Filing Date:
July 19, 2017
Export Citation:
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Assignee:
SONY CORPORATION (1-7-1, Konan Minato-k, Tokyo 75, 〒1080075, JP)
International Classes:
H01L21/8239; G11B5/39; H01F10/16; H01F10/32; H01L27/105; H01L29/82; H01L43/08; H01L43/10
Domestic Patent References:
WO2015041890A12015-03-26
WO2012086183A12012-06-28
Foreign References:
JP2013048210A2013-03-07
JP2014513866A2014-06-05
JP2015176933A2015-10-05
JP2014241449A2014-12-25
Attorney, Agent or Firm:
YAMAMOTO Takahisa et al. (Room 301, Akiba Building 3-2, Ohsaki 4-chome, Shinagawa-k, Tokyo 32, 〒1410032, JP)
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