Title:
MAGNETORESISTIVE ELEMENT IN WHICH I-III-VI2 COMPOUND SEMICONDUCTOR IS USED, METHOD FOR MANUFACTURING SAID MAGNETORESISTIVE ELEMENT, AND MAGNETIC STORAGE DEVICE AND SPIN TRANSISTOR IN WHICH SAID MAGNETORESISTIVE ELEMENT IS USED
Document Type and Number:
WIPO Patent Application WO/2017/222038
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a magnetoresistive element that has a high magnetic resistance (MR) ratio and a suitable device resistance (RA) for device applications. This magnetoresistive element has a structure in which a first ferromagnetic layer 16, a nonmagnetic layer 18, and a second ferromagnetic layer 20 are laminated on a substrate 10, wherein the magnetoresistive element is characterized in that: said layers are a first ferromagnetic layer 16 comprising a Heusler alloy, a second ferromagnetic layer 20 comprising a Heusler alloy, and a nonmagnetic layer 18 comprising a I-III-VI2-type chalcopyrite compound semiconductor; the thickness of the nonmagnetic layer 18 is 0.5-3 nm; the magnetic resistance (MR) change rate is 40% or greater; and the element resistance (RA) is 0.1 [Ωµm2]-3 [Ωµm2].
Inventors:
KASAI SHINYA (JP)
TAKAHASHI YUKIKO (JP)
CHENG POHAN (JP)
IKHTIAR (JP)
MITANI SEIJI (JP)
OHKUBO TADAKATSU (JP)
HONO KAZUHIRO (JP)
TAKAHASHI YUKIKO (JP)
CHENG POHAN (JP)
IKHTIAR (JP)
MITANI SEIJI (JP)
OHKUBO TADAKATSU (JP)
HONO KAZUHIRO (JP)
Application Number:
PCT/JP2017/023140
Publication Date:
December 28, 2017
Filing Date:
June 23, 2017
Export Citation:
Assignee:
NAT INST MATERIALS SCIENCE (JP)
International Classes:
H01L43/10; G11B5/39; H01F10/13; H01F10/16; H01F10/30; H01L29/82; H01L43/08; H01L43/12
Domestic Patent References:
| WO2010032527A1 | 2010-03-25 |
Foreign References:
| JP2004128085A | 2004-04-22 | |||
| JP2015125012A | 2015-07-06 | |||
| JP2014203931A | 2014-10-27 |
Attorney, Agent or Firm:
NISHIZAWA Toshio et al. (JP)
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