Title:
MAGNETORESISTIVE ELEMENT, MAGNETIC DISC DEVICE, AND MAGNETORESISTIVE MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/122078
Kind Code:
A1
Abstract:
Disclosed is a magnetoresistive element having a proper area resistance and a high magnetic resistance ratio. In the magnetoresistive element, a semimetal having at least one structure selected from an L21 structure, a B2 structure, an A2 structure, a C1b structure and a B1 structure is used in an intermediate layer to be arranged between a fixed layer and a free layer. In this manner, it becomes possible to form a homogeneous intermediate layer having excellent lattice matching to the fixed layer and the free layer. Electrons capable of transmitting through the intermediate layer are controlled by controlling the laminate structure of a semimetal layer or by doping. In this manner, a high magnetic resistance ratio and a higher area resistance compared with those of metals can be achieved.
Inventors:
YABUUCHI Shin (HITACHI LTD., 2520, Akanuma, Hatoyama-machi, Hiki-gu, Saitama 95, 〒3500395, JP)
Application Number:
JP2011/051167
Publication Date:
October 06, 2011
Filing Date:
January 24, 2011
Export Citation:
Assignee:
HITACHI, LTD. (6-6 Marunouchi 1-chome, Chiyoda-ku Tokyo, 80, 〒1008280, JP)
株式会社日立製作所 (〒80 東京都千代田区丸の内一丁目６番６号 Tokyo, 〒1008280, JP)
株式会社日立製作所 (〒80 東京都千代田区丸の内一丁目６番６号 Tokyo, 〒1008280, JP)
International Classes:
H01L43/10; C22C12/00; C22C28/00; C22C30/00; C22C38/00; G11B5/39; H01L21/8246; H01L27/105; H01L43/08
Attorney, Agent or Firm:
HIRAKI Yusuke et al. (Kamiya-cho MT Bldg. 19F, 3-20 Toranomon 4-chome, Minato-k, Tokyo 01, 〒1050001, JP)
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Claims:
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