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Patent Searching and Data


Title:
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
Document Type and Number:
WIPO Patent Application WO/2015/016061
Kind Code:
A1
Abstract:
[Problem] To provide: a magnetoresistive element which has low saturation magnetization and high perpendicular magnetic anisotropy; and a magnetic memory. [Solution] A magnetoresistive element which is provided with a first magnetic layer, a second magnetic layer and a first non-magnetic layer that is arranged between the first magnetic layer and the second magnetic layer. The first magnetic layer is provided with a magnetic film that contains Mn, Ga and at least one element that is selected from the group consisting of Al, Ge, Ir, Cr, Pt, Ru, Pd, Rh, Ni, Fe, Re, Au, Cu, B, C, P, Gd, Tb and Dy.

Inventors:
KATO YUSHI (JP)
DAIBOU TADAOMI (JP)
KITAGAWA EIJI (JP)
OCHIAI TAKAO (JP)
ITO JUNICHI (JP)
KUBOTA TAKAHIDE (JP)
MIZUKAMI SHIGEMI (JP)
MIYAZAKI TERUNOBU (JP)
Application Number:
PCT/JP2014/068818
Publication Date:
February 05, 2015
Filing Date:
July 15, 2014
Export Citation:
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Assignee:
TOSHIBA KK (JP)
UNIV TOHOKU NAT UNIV CORP (JP)
International Classes:
H01L21/8246; H01L43/08; H01L27/105; H01L43/10
Foreign References:
JP2010080536A2010-04-08
JP2010140586A2010-06-24
JP2013073978A2013-04-22
Attorney, Agent or Firm:
KATSUNUMA Hirohito et al. (JP)
Katsunuma Hirohito (JP)
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