Title:
MAGNETORESISTIVE ELEMENT AND MAGNETICALLY SENSITIVE SWITCH
Document Type and Number:
WIPO Patent Application WO/2010/140396
Kind Code:
A1
Abstract:
Disclosed is a semiconductor magnetoresistive element which comprises a silicon substrate (2) that serves as a semiconductor substrate, a pair of electrodes (3, 3) that are arranged on the silicon substrate (2) at a certain distance from each other, and a voltage-applying circuit (4) for applying a bias voltage between the electrodes (3, 3). The silicon substrate (2) is configured using silicon that has a carrier density of less than 1013 cm-3 at 300 kelvins. Consequently, the semiconductor magnetoresistive element exhibits a positive magnetoresistive effect more than 10 times even at room temperature.
Inventors:
KOBAYASHI, Kensuke (Kyoto University Gokasho, Uji-sh, Kyoto 11, 〒6110011, JP)
小林 研介 (〒11 京都府宇治市五ヶ庄 国立大学法人京都大学化学研究所内 Kyoto, 〒6110011, JP)
小林 研介 (〒11 京都府宇治市五ヶ庄 国立大学法人京都大学化学研究所内 Kyoto, 〒6110011, JP)
Application Number:
JP2010/052409
Publication Date:
December 09, 2010
Filing Date:
February 18, 2010
Export Citation:
Assignee:
Kyoto University (36-1, Yoshida-honmachi Sakyo-ku, Kyoto-sh, Kyoto 01, 〒6068501, JP)
国立大学法人京都大学 (〒01 京都府京都市左京区吉田本町３６番地１ Kyoto, 〒6068501, JP)
KOBAYASHI, Kensuke (Kyoto University Gokasho, Uji-sh, Kyoto 11, 〒6110011, JP)
国立大学法人京都大学 (〒01 京都府京都市左京区吉田本町３６番地１ Kyoto, 〒6068501, JP)
KOBAYASHI, Kensuke (Kyoto University Gokasho, Uji-sh, Kyoto 11, 〒6110011, JP)
International Classes:
H01L43/08; H01H36/00
Attorney, Agent or Firm:
Kyoto International Patent Law Office (Hougen-Sizyokarasuma Building, 37 Motoakuozi-tyo, Higasinotouin Sizyo-sagaru, Simogyo-ku, Kyoto-s, Kyoto 91, 〒6008091, JP)
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