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Title:
MAGNETORESISTIVE ELEMENT AND MEMORY DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2010/073790
Kind Code:
A1
Abstract:
Provided are magnetic memory elements that have 4F2 size memory cells that realize cross-point memory. In a magnetic memory element (100), a first magnetic layer (22), a third magnetic layer (spin polarized layer) (27), an intermediate layer (21), a fourth magnetic layer (spin polarized layer) (26), and a second magnetic layer (20) are laminated in this order. The intermediate layer (21) is made of an insulator or a non-magnetic material. The second magnetic layer (20) is made of a ternary alloy of gadolinium, iron and cobalt, a binary alloy of gadolinium and cobalt or a binary alloy of terbium and cobalt, or the first magnetic layer (22) is made of a ternary alloy of terbium, iron and cobalt or a binary alloy of terbium and cobalt.

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Inventors:
YAMADA, Michiya (Ltd. 1 Fuji-machi, Hino-sh, Tokyo 02, 〒1918502, JP)
山田　三千矢 (〒02 東京都日野市富士町１番地　富士電機アドバンストテクノロジー株式会社内 Tokyo, 〒1918502, JP)
Application Number:
JP2009/067237
Publication Date:
July 01, 2010
Filing Date:
October 02, 2009
Export Citation:
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Assignee:
Fuji Electric Holdings Co., Ltd. (1-1 Tanabeshinden, Kawasaki-ku Kawasaki-sh, Kanagawa 56, 〒2100856, JP)
富士電機ホールディングス株式会社 (〒56 神奈川県川崎市川崎区田辺新田１番１号 Kanagawa, 〒2100856, JP)
YAMADA, Michiya (Ltd. 1 Fuji-machi, Hino-sh, Tokyo 02, 〒1918502, JP)
International Classes:
H01L43/08; H01F10/16; H01F10/32; H01L21/8246; H01L27/105
Attorney, Agent or Firm:
OKUYAMA, Shoichi et al. (8th Floor, Akasaka NOA Bldg. 2-12, Akasaka 3-chome, Minato-k, Tokyo 52, 〒1070052, JP)
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