Title:
MAGNETORESISTIVE ELEMENT, METHOD OF PRODUCING SAME, AND STORAGE MEDIUM USED IN METHOD OF PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2010/064564
Kind Code:
A1
Abstract:
A magnetoresistive element having an MR ratio higher than those of prior arts. The magnetoresistive element is provided with a substrate (11), a first ferromagnetic layer (123) formed on top of the substrate (11), a tunnel barrier layer (122) formed on top of the first ferromagnetic layer (123) and having a crystal structure of a metal oxide containing B and Mg atoms, and a second ferromagnetic layer (121) formed on top of the tunnel barrier layer (122).
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Inventors:
KURIBAYASHI Masaki (2-5-1 Kurigi, Asao-ku, Kawasaki-sh, Kanagawa 50, 〒2158550, JP)
栗林 正樹 (〒50 神奈川県川崎市麻生区栗木２－５－１ キヤノンアネルバ株式会社内 Kanagawa, 〒2158550, JP)
栗林 正樹 (〒50 神奈川県川崎市麻生区栗木２－５－１ キヤノンアネルバ株式会社内 Kanagawa, 〒2158550, JP)
Application Number:
JP2009/069864
Publication Date:
June 10, 2010
Filing Date:
November 25, 2009
Export Citation:
Assignee:
CANON ANELVA CORPORATION (2-5-1, Kurigi Asao-ku, Kawasaki-sh, Kanagawa 50, 〒2158550, JP)
キヤノンアネルバ株式会社 (〒50 神奈川県川崎市麻生区栗木２－５－１ Kanagawa, 〒2158550, JP)
KURIBAYASHI Masaki (2-5-1 Kurigi, Asao-ku, Kawasaki-sh, Kanagawa 50, 〒2158550, JP)
キヤノンアネルバ株式会社 (〒50 神奈川県川崎市麻生区栗木２－５－１ Kanagawa, 〒2158550, JP)
KURIBAYASHI Masaki (2-5-1 Kurigi, Asao-ku, Kawasaki-sh, Kanagawa 50, 〒2158550, JP)
International Classes:
H01L43/10; G11B5/39; H01F10/187; H01F10/30; H01F10/32; H01L21/8246; H01L27/105; H01L43/08; H01L43/12
Attorney, Agent or Firm:
OKABE Masao et al. (No. 602, Fuji Bldg.2-3, Marunouchi 3-chom, Chiyoda-ku Tokyo 05, 〒1000005, JP)
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