Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
MAGNETORESISTIVE MAGNETIC FIELD SENSOR
Document Type and Number:
WIPO Patent Application WO2005085890
Kind Code:
A3
Abstract:
A magnetic field sensing structure is described that uses magnetoresistance as a signal. The structure includes an inhomogeneous network of interconnected semiconducting elements which may be of various shapes. By tuning or selecting physical properties of the elements, the overall magnetoresistive response may be adjusted to be large and substantially linear over a range of magnetic fields. Such sensing structures may be used, for example, in hard-disk read-heads. Other embodiments may find application in low or high field sensing, with some being of particular interest where thermal stability is of importance.

More Like This:
Inventors:
LITTLEWOOD PETER (GB)
PARISH MEERA (GB)
Application Number:
PCT/GB2005/000741
Publication Date:
December 01, 2005
Filing Date:
February 28, 2005
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
UNIV CAMBRIDGE TECH (GB)
LITTLEWOOD PETER (GB)
PARISH MEERA (GB)
International Classes:
G01R33/09; G11B5/39; (IPC1-7): G01R33/09; G11B5/39
Foreign References:
EP0375107A21990-06-27
US3731007A1973-05-01
EP1052520A12000-11-15
Other References:
PARISH M M ET AL: "Non-saturating magnetoresistance in heavily disordered semiconductors", NATURE NATURE PUBLISHING GROUP UK, vol. 426, no. 6963, 13 November 2003 (2003-11-13), pages 162 - 165, XP002330399, ISSN: 0028-0836
Download PDF: