Title:
MAGNETRON ELEMENT AND MAGNETRON SPUTTERING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2018/040588
Kind Code:
A1
Abstract:
Disclosed are a magnetron element and a magnetron sputtering apparatus. The magnetron element comprises a closed magnetron (1) and a non-closed magnetron (2). A closed plasma path (13) is formed between an inner magnetic pole (11) and an outer magnetic pole (12) of the closed magnetron. A non-closed plasma path (23) is formed between a first magnetic pole (21) and a second magnetic pole (22) of the non-closed magnetron. The closed plasma path and the non-closed plasma path are at least correspondingly located in a radius region from a target centre to a target edge; and the sum of the effective extension length of the closed plasma path in a target radial direction and the effective extension length of the non-closed plasma path in the target radial direction is greater than or equal to the radius of the target. The magnetron element can achieve whole target corrosion of the target, and avoid the presence of particles in a central region of the target, thereby improving the utilization rate of the target, further improving the ionization rate of a metal target during a sputtering process, and at the same time, improving the filling effect of through holes on a wafer.
Inventors:
YANG YUJIE (CN)
Application Number:
PCT/CN2017/081325
Publication Date:
March 08, 2018
Filing Date:
April 21, 2017
Export Citation:
Assignee:
BEIJING NAURA MICROELECTRONICS EQUIPMENT CO LTD (CN)
International Classes:
H01J25/50; C23C14/35; H01J37/34
Foreign References:
| US7179351B1 | 2007-02-20 |
Attorney, Agent or Firm:
TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
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