Title:
MAGNETRON SPUTTERING PREPARATION METHOD FOR GRADIENT SELF-DOPED PURE-PHASE MULTI-ELEMENT METAL OXIDE THIN FILM
Document Type and Number:
WIPO Patent Application WO/2020/143101
Kind Code:
A1
Abstract:
A magnetron sputtering preparation method for a gradient self-doped pure-phase multi-element metal oxide thin film, taking metal A as target A, taking metal B as target B, and taking argon and oxygen as co-sputtering gases. A sputtering power gradual-change controller is used for controlling the initial sputtering power and the power gradual-change rate of the target A and the target B in a co-sputtering process, reactive sputtering is performed under gradual-change sputtering conditions, a gradient self-doped pure-phase multi-element metal oxide thin film is deposited on the surface of a substrate, the gradient change of a metal ion A/B proportion is formed from the bottom of the thin film to the top of the thin film, and the multi-element metal oxide is AxByOz, wherein A is metal A, B is metal B, O is an oxygen atom, and x, y, z refer to chemical doses of the metal A, the metal B, the oxygen atom O.
Inventors:
WANG FUXIAN (CN)
GUO PENGRAN (CN)
LIANG WEIXIN (CN)
GUO PENGRAN (CN)
LIANG WEIXIN (CN)
Application Number:
PCT/CN2019/075648
Publication Date:
July 16, 2020
Filing Date:
February 21, 2019
Export Citation:
Assignee:
GUANGDONG INST ANALYSIS CHINA NAT ANALYTICAL CT GUANGZHOU (CN)
International Classes:
C23C14/35
Foreign References:
| CN104561891A | 2015-04-29 | |||
| CN102117810A | 2011-07-06 | |||
| CN105624629A | 2016-06-01 | |||
| CN105132874A | 2015-12-09 | |||
| CN102400099A | 2012-04-04 | |||
| JP2003213408A | 2003-07-30 |
Attorney, Agent or Firm:
GUANGZHOU KEYUE I.P. LAW OFFICE (CN)
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