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Patent Searching and Data


Title:
MANGANESE OXIDE THIN FILM AND OXIDE LAMINATE
Document Type and Number:
WIPO Patent Application WO/2013/140677
Kind Code:
A1
Abstract:
Provided is a thin film or a laminate, which undergoes phase transition through mott transition at room temperature to exhibit a switching function. In one embodiment of the present invention, a perovskite-type manganese oxide thin film (2) formed on a surface of a substrate (1) having a (110) plane orientation or a (210) plane orientation is provided. The manganese oxide thin film has a compositional formula Ln1-xAexMnO3 (wherein Ln represents at least one trivalent rare earth element selected from lanthanoid elements; and Ae represents at least one alkali earth element selected from the group consisting of Ca, Sr and Ba), wherein 0 < x ≤ 1/18 in the compositional formula.

Inventors:
OGIMOTO YASUSHI (JP)
Application Number:
PCT/JP2012/081763
Publication Date:
September 26, 2013
Filing Date:
December 07, 2012
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
C23C14/08; H01F10/18; H01L21/316; H01L21/8246; H01L27/105; H01L43/08
Foreign References:
JP2000095522A2000-04-04
Other References:
M. SIRENA ET AL.: "Metal-insulator transition induced by postdeposition annealing in low doped manganite films", JOURNAL OF APPLIED PHYSICS, vol. 105, 2009, pages 033902
Y. YAMASAKI ET AL.: "Interfacial structure of manganite superlattice", JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, vol. 80, July 2011 (2011-07-01), pages 073601
DU YONGSHENG ET AL.: "Microstructure and properties of Lao.7Sro.3MnO3 films deposited on LaAlO3 (100), (110), and (111) substrates", JOURNAL OF RARE EARTHS, vol. 24, 2006, pages 560 - 563
Attorney, Agent or Firm:
KOUNO, HIROAKI (JP)
Hiroaki Kono (JP)
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