Title:
MANUFACTURING METHOD FOR BUFFER LAYER OF PHOTOELECTRIC CONVERSION ELEMENT, AND MANUFACTURING METHOD FOR PHOTOELECTRIC CONVERSION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2012/176425
Kind Code:
A1
Abstract:
A manufacturing method for a buffer layer of a photoelectric conversion element which, when the same chemical bath deposition solution is used multiple times to deposit buffer layers, suppresses the adhesion of particulate solids to the surface of the buffer layer. The same chemical bath deposition solution (102) is repeatedly used n times (where n is an integer of 2 or more) to form, each time over the course of a predetermined buffer layer formation period, a buffer layer comprising a Zn compound on a photoelectric conversion semiconductor layer (30) provided on the outermost surface of a new substrate (10). The chemical bath deposition solution (102) is filtered using a filter (106) during the m-th buffer layer formation (where m is an integer that satisfies the relationship 2 ≤ m ≤ n), or during the stage between the (m-1)-th buffer layer formation and the m-th buffer layer formation when a buffer layer is not being formed.
Inventors:
KAWANO TETSUO (JP)
Application Number:
PCT/JP2012/003968
Publication Date:
December 27, 2012
Filing Date:
June 19, 2012
Export Citation:
Assignee:
FUJIFILM CORP (JP)
KAWANO TETSUO (JP)
KAWANO TETSUO (JP)
International Classes:
H01L21/368; H01L31/04
Domestic Patent References:
| WO2008120306A1 | 2008-10-09 |
Foreign References:
| JP2002343987A | 2002-11-29 | |||
| JP2003124487A | 2003-04-25 | |||
| JP2011501447A | 2011-01-06 | |||
| US20100087027A1 | 2010-04-08 | |||
| JP2011159648A | 2011-08-18 |
Attorney, Agent or Firm:
YANAGIDA, Masashi et al. (JP)
Seiji Yanagida (JP)
Seiji Yanagida (JP)
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Claims: