MANUFACTURING METHOD OF CU-BASED RESISTIVE RANDOM ACCESS MEMORY, AND MEMORY

WIPO Patent Application WO/2017/181418

A1

Provided are a manufacturing method of a Cu-based resistive random access memory, and a memory. The manufacturing method comprises: chemically reacting a pattern of a lower copper electrode (10) to form a compound buffer layer (40), the compound buffer layer (40) being capable of preventing oxidation of the lower copper electrode (10); depositing a solid electrolyte material (50) on the compound buffer layer (40); and depositing an upper electrode (60) on the solid electrolyte material (50) to form a memory. In the above technical solution, the compound buffer layer (40) capable of preventing oxidation of the lower copper electrode (10) is inserted between the lower copper electrode (10) and the solid electrolyte material (50) to efficiently prevent oxidation of the lower copper electrode (10) in a growth process of the solid electrolyte material (50), such that an electrode interface does not become rough due to oxidation, thereby solving a technical problem in the prior art in which a Cu-based resistive random access memory has unsatisfactory reliability and a low yield resulting from a rough electrode interface, thereby increasing reliability and a yield for a device.

LV HANGBING (CN)
LIU MING (CN)
LIU QI (CN)
LONG SHIBING (CN)

PCT/CN2016/080022

October 26, 2017

April 22, 2016

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THE INST OF MICROELECTRONICS OF CHINESE ACAD OF SCIENCES (CN)

H01L45/00

CN101894907A	2010-11-24
CN101740717A	2010-06-16
CN102044630A	2011-05-04
US20140353572A1	2014-12-04

BEIJING BRIGHT & RIGHT LAW FIRM (CN)

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