MANUFACTURING METHOD FOR FLUXGATE CHIP

WIPO Patent Application WO/2021/248621

A1

A manufacturing method for a fluxgate chip, comprising: firstly, selecting two high-resistance silicon wafers (100), electroplating a ferromagnetic core (200) on the surface of one of the two high-resistance silicon wafers, and providing a ferromagnetic core cavity (120) on the surface of the other high-resistance silicon wafer; then, bonding the two high-resistance silicon wafers (100) up and down; next, respectively providing coil grooves (140, 170), through grooves (160, 190) and electrode windows (150, 180) on the surfaces of opposite sides of the two high-resistance silicon wafers (100) to form a silicon wafer mold; and finally, filling the surface of the silicon wafer mold with alloy (400). By means of electroplating, post-bonding and final etching, on the one hand, the formed fluxgate chip has both small thickness and sufficient strength, on the other hand, large-scale batch production of the fluxgate chip can be achieved, the working efficiency is improved, and the production cost is reduced.

HOU XIAOWEI (CN)
LV YANG (CN)
ZHENG LIANGGUANG (CN)
LI JUPING (CN)
ZHANG PO (CN)
WU PENG (CN)

PCT/CN2020/102007

December 16, 2021

July 15, 2020

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NINGBO CRRC TIMES TRANSDUCER TECH CO LTD (CN)

B81C1/00; B81C3/00

CN106291405A	2017-01-04
CN107367288A	2017-11-21
CN101481080A	2009-07-15
CN106772142A	2017-05-31
CN206959858U	2018-02-02
US20120206134A1	2012-08-16
US20040251897A1	2004-12-16

NINGBO YINZHOU SHENGFEI PATENT ATTORNEY (SPECIAL GENERAL PARTNERSHIP) (CN)

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