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Title:
MANUFACTURING METHOD OF IMAGE SENSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/192376
Kind Code:
A1
Abstract:
A manufacturing method of an image sensing device includes the following steps. A substrate is provided. At least one image sensing unit is disposed in the substrate. A passivation layer is formed on the substrate. An auxiliary layer is formed on the passivation layer. A material composition of the auxiliary layer is different from a material composition of the passivation layer. An annealing process is performed to the substrate and the passivation layer. The passivation layer is covered by the auxiliary layer during the annealing process. The auxiliary layer is removed after the annealing process. The ability to constrain and/or passivate free charge in and/or near the passivation layer may be enhanced by performing the annealing process with the auxiliary layer covering the passivation layer. The electrical performance of the image sensing device may be improved accordingly.

Inventors:
SUN, Peng (18 Gaoxin 4TH Road, Donghu High-Tech ZoneWuhan, Hubei 5, 430205, CN)
WANG, Xilong (18 Gaoxin 4TH Road, Donghu High-Tech ZoneWuhan, Hubei 5, 430205, CN)
HU, Sheng (18 Gaoxin 4TH Road, Donghu High-Tech ZoneWuhan, Hubei 5, 430205, CN)
Application Number:
CN2019/080030
Publication Date:
October 10, 2019
Filing Date:
March 28, 2019
Export Citation:
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Assignee:
WUHAN XINXIN SEMICONDUCTOR MANUFACTURING CO., LTD. (18 Gaoxin 4TH Road, Donghu High-Tech ZoneWuhan, Hubei 5, 430205, CN)
International Classes:
H01L27/146
Foreign References:
CN108511474A2018-09-07
CN101154676A2008-04-02
CN101154676A2008-04-02
JP2000277719A2000-10-06
KR20050011955A2005-01-31
CN102257618A2011-11-23
Attorney, Agent or Firm:
SHANGHAI SHENXIN LAW FIRM (Suite J, 15th Floor Huamin Empire Plaza,No. 726, West Yan An Road, Changning, Shanghai 0, 200050, CN)
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