Title:
MANUFACTURING METHOD FOR LATERALLY-DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2016/119697
Kind Code:
A1
Abstract:
A manufacturing method for laterally-diffused metal oxide semiconductor field effect transistor, comprising steps of: forming a drift region (20) of a first doping type on a substrate; photoetching to form an injection window via a photo-etching plate; injecting a second doping type ion to form a body region (30), via an injection window, and injecting a first doping type ion to form a source region (52), controlling an injection angle and injection energy so as to make a junction depth of the body region greater than that of the source region, and the width of the body region being greater than that of the source region; forming a gate oxide layer; depositing and etching the polysilicon to form a gate electrode (70).
Inventors:
HAN GUANGTAO (CN)
SUN GUIPENG (CN)
SUN GUIPENG (CN)
Application Number:
PCT/CN2016/072319
Publication Date:
August 04, 2016
Filing Date:
January 27, 2016
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB1 CO LTD (CN)
International Classes:
H01L29/78; H01L21/336
Foreign References:
| US20090283827A1 | 2009-11-19 | |||
| CN102446733A | 2012-05-09 | |||
| CN102386096A | 2012-03-21 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
广州华进联合专利商标代理有限公司 (CN)
广州华进联合专利商标代理有限公司 (CN)
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