Title:
MANUFACTURING METHOD FOR LDMOS INTEGRATED DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/098775
Kind Code:
A1
Abstract:
In the manufacturing method for an LDMOS integrated device provided by the present invention, a provided semiconductor substrate has an NLDMOS region and a PLDMOS region; then a dielectric layer on the NLDMOS region and a dielectric layer on the PLDMOS region are formed on the semiconductor substrate, and a stress material layer is formed on the dielectric layer on the NLDMOS region and/or on the dielectric layer on the PLDMOS region, the thickness of the dielectric layer on the NLDMOS region being greater than the thickness of the dielectric layer on the PLDMOS region; then heat treatment is performed to adjust the stress of the stress material layer, so as to improve the electron mobility of a device; then the stress material layer is removed. Thus, the electron mobility of an NLDMOS device and/or a PLDMOS device can be improved, and a high-performance NLDMOS and a high-performance PLDMOS can be prepared simultaneously in a same process flow; moreover, the thickness of the dielectric layer on the NLDMOS region is greater than the thickness of the dielectric layer on the PLDMOS region, that is, the thickness of the dielectric layer under the Big contact in the NLDMOS region can meet RESURF requirements, and the thickness of the dielectric layer under the Big contact in the PLDMOS region can meet RESURF requirements, thereby improving the RESURF capability of the Big contact of the LDMOS integrated device as a whole.
Inventors:
XU CHAOQI (CN)
CHEN SHUXIAN (CN)
MA CHUNXIA (CN)
ZHANG YI (CN)
XU PENGLONG (CN)
LIN FENG (CN)
CAO RUIBIN (CN)
CHEN SHUXIAN (CN)
MA CHUNXIA (CN)
ZHANG YI (CN)
XU PENGLONG (CN)
LIN FENG (CN)
CAO RUIBIN (CN)
Application Number:
PCT/CN2022/135755
Publication Date:
June 08, 2023
Filing Date:
December 01, 2022
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L21/8238; H01L21/336; H01L29/78
Foreign References:
| CN110556388A | 2019-12-10 | |||
| CN108574014A | 2018-09-25 | |||
| CN112825327A | 2021-05-21 | |||
| US20170222042A1 | 2017-08-03 |
Attorney, Agent or Firm:
SHANGHAI SAVVY INTELLECTUAL PROPERTY AGENCY (CN)
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