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Patent Searching and Data


Title:
MANUFACTURING METHOD FOR LOW-TEMPERATURE POLYCRYSTALLINE SILICON THIN-FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2017/206215
Kind Code:
A1
Abstract:
The present invention provides a manufacturing method for a low-temperature polycrystalline silicon thin-film transistor. In the method, a silicon nitride layer in contact with a gate electrode is oxidized into a silicon oxynitride layer to use the silicon oxynitride to be in contact with the gate electrode. Compared with the silicon nitride layer, the silicon oxynitride layer not only can resist ion diffusion, but also has high electrical stability and can effectively suppress carrier injection at a gate insulating layer, so that the reliability of the gate insulating layer and the stability of the low-temperature polycrystalline silicon thin-film transistor can be enhanced. The manufacturing method is simple, and the number of photomasks in the manufacturing process does not need to be increased.

Inventors:
WU, Yuanchun (NO.9-2, Tangming Road Guangming District o, Shenzhen Guangdong 2, 518132, CN)
LIEN, Shuichih (NO.9-2, Tangming Road Guangming District o, Shenzhen Guangdong 2, 518132, CN)
ZHOU, Xingyu (NO.9-2, Tangming Road Guangming District o, Shenzhen Guangdong 2, 518132, CN)
Application Number:
CN2016/086723
Publication Date:
December 07, 2017
Filing Date:
June 22, 2016
Export Citation:
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Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO.,LTD. (NO.9-2, Tangming Road Guangming District o, Shenzhen Guangdong 2, 518132, CN)
International Classes:
H01L21/336; H01L21/28
Attorney, Agent or Firm:
COMIPS INTELLECTUAL PROPERTY OFFICE (Room 15E, Shenkan Building Shangbu Zhong Road, Futian Distric, Shenzhen Guangdong 8, 518028, CN)
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