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Title:
MANUFACTURING METHOD FOR LOW TEMPERATURE POLYSILICON ARRAY SUBSTRATE AND MANUFACTURING METHOD FOR LOW TEMPERATURE POLYSILICON THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2019/024195
Kind Code:
A1
Abstract:
A manufacturing method for a low temperature polysilicon array substrate and a manufacturing method for a low temperature polysilicon thin film transistor, the manufacturing method for the low temperature polysilicon array substrate comprising: providing a substrate (10); forming a polysilicon semiconductor pattern (30) on the substrate (10), a first channel region (31), a first source region (32) and a first drain region (33) being formed in the polysilicon semiconductor pattern (30) corresponding to a first type of thin film transistor; forming a gate insulating layer (40); performing activation process; forming, after the activation process, a gate electrode (50) on the gate insulating layer (40); forming an interlayer insulating layer (60) on the gate insulating layer (40) and the gate electrode (50); performing hydrogenaration; forming, after the hydrogenaration, a source/drain pattern (70) on the interlayer insulating layer (60), and enabling the source/drain pattern (70) to be connected, respectively by means of a through-hole (61), to the source region (32) and the drain region (33) of the polysilicon semiconductor pattern (30). The method above can enable the low temperature polysilicon technique to be used to a large sized screen.

Inventors:
CHEN, Chen (No. 9-2, Tangming Rd Guangming New Distric, Shenzhen Guangdong 2, 518132, CN)
Application Number:
CN2017/102658
Publication Date:
February 07, 2019
Filing Date:
September 21, 2017
Export Citation:
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Assignee:
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD (Building C5 Biolake of Optics Valley, No. 666 Gaoxin Avenue East Lake High-tech Development Zon, Wuhan Hubei 0, 430070, CN)
International Classes:
H01L27/12; H01L21/77
Attorney, Agent or Firm:
CHINA WISPRO INTELLECTUAL PROPERTY LLP. (Room A806, Zhongdi Building China University of Geosciences Base, No. 8 Yuexing 3rd Road, High-Tech Industrial Estate, Nanshan Distric, Shenzhen Guangdong 7, 518057, CN)
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