Title:
MANUFACTURING METHOD FOR METAL OXIDE THIN-FILM AND MANUFACTURING METHOD FOR THIN-FILM TRANSISTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2016/086436
Kind Code:
A1
Abstract:
Provided is a manufacturing method for a metal oxide thin-film, the method comprising: according to different membranous ingredients required by a target product, using two or more target materials having different proportions of ingredients, and depositing the substance on the target material onto a substrate by controlling film-forming speed and film-forming time, so as to obtain a metal oxide thin-film containing different membranous ingredients. Also provided are a manufacturing method for a thin-film transistor substrate, and a thin-film transistor substrate manufactured therewith.
Inventors:
ZHAO GUO (CN)
Application Number:
PCT/CN2014/093498
Publication Date:
June 09, 2016
Filing Date:
December 10, 2014
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
H01L21/84; H01L21/336
Foreign References:
| CN103373845A | 2013-10-30 | |||
| CN103451609A | 2013-12-18 | |||
| CN101748361A | 2010-06-23 |
Attorney, Agent or Firm:
YUHONG INTELLECTUAL PROPERTY LAW FIRM (CN)
北京聿宏知识产权代理有限公司 (CN)
北京聿宏知识产权代理有限公司 (CN)
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