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Patent Searching and Data


Title:
MANUFACTURING METHOD FOR MRAM DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/228579
Kind Code:
A1
Abstract:
Provided in the present invention is a manufacturing method for an MRAM device, comprising: sequentially forming an MTJ component layer, a first hard mask layer, and a second hard mask layer on a base electrode; patterning the second hard mask layer, sequentially etching the second hard mask layer and the first hard mask layer; removing the remaining second hard mask layer; depositing a first protective layer, the protective layer covering the sidewall and the surface of the remaining first hard mask layer and the surface of the MTJ component layer; etching the protective layer, retaining only the protective layer covering the sidewall of the remaining first hard mask layer; with the remaining first hard mask layer and the protective layer on the sidewall thereof serving as hard masks, etching the MTJ component layer to produce an MTJ prefab; removing the protective layer covering the sidewall of the remaining first hard mask layer; and, with the remaining first hard mask layer serving as a hard mask, etching the MTJ prefab to produce an MTJ component flush with the sidewall of the remaining first hard mask layer. The present invention reduces damages to the sidewall of the MTJ component and increases the reliability of the MRAM device.

Inventors:
YANG CHENGCHENG (CN)
LIU RUISHENG (CN)
Application Number:
PCT/CN2020/088934
Publication Date:
November 19, 2020
Filing Date:
May 07, 2020
Export Citation:
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Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
H01L43/12; H01L21/306
Foreign References:
CN108140728A2018-06-08
US10103322B12018-10-16
CN103985672A2014-08-13
CN108232004A2018-06-29
CN104465984A2015-03-25
CN108232007A2018-06-29
JP2013065755A2013-04-11
CN105428231A2016-03-23
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
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