MANUFACTURING METHOD FOR POLYCRYSTALLINE SILICON INGOT, AND POLYCRYSTALLINE SILICON INGOT

Title:

MANUFACTURING METHOD FOR POLYCRYSTALLINE SILICON INGOT, AND POLYCRYSTALLINE SILICON INGOT

Document Type and Number:

WIPO Patent Application WO/2011/118770

Kind Code:

A1

Abstract:

Disclosed are a manufacturing method for a polycrystalline silicon ingot, and a polycrystalline silicon ingot in the base of which parts having a high oxygen concentration are reduced, and which can significantly improve the production yield of polycrystalline silicon. In the disclosed manufacturing method for a polycrystalline silicon ingot, a silicon melt accumulated in a crucible is unidirectionally solidified from the bottom of the crucible in an upward direction. A silicon nitride coating layer is formed on the inner surface of the side walls and the base of the crucible, and the solidification process which occurs in the crucible is classified in three regions, using the bottom of the crucible as a base: a first region from 0 mm to height X (10 mm≤X<30 mm); a second region from height X to height Y (30 mm≤Y<100 mm); and a third region from at least height Y. The solidification rate (V1) in the first region is set in the range 10 mm/h≤V1≤20 mm/h, and the solidification rate (V2) in the second region is set in the range 1 mm/h≤V2≤5mm/h.

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Inventors:

TSUZUKIHASHI KOJI (JP)
IKEDA HIROSHI (JP)
KANAI MASAHIRO (JP)
WAKITA SABURO (JP)

Application Number:

PCT/JP2011/057355

Publication Date:

September 29, 2011

Filing Date:

March 25, 2011

Export Citation:

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Assignee:

MITSUBISHI MATERIALS CORP (JP)
MITSUBISHI MAT ELECT CHEM CO (JP)
TSUZUKIHASHI KOJI (JP)
IKEDA HIROSHI (JP)
KANAI MASAHIRO (JP)
WAKITA SABURO (JP)

International Classes:

C01B33/02; B22D27/04; C30B29/06

Foreign References:

JP2004196577A	2004-07-15
JP2001198648A	2001-07-24
JP2006273628A	2006-10-12

Attorney, Agent or Firm:

SHIGA Masatake et al. (JP)
Masatake Shiga (JP)

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