Title:
MANUFACTURING METHOD FOR POLYCRYSTALLINE SILICON INGOT, AND POLYCRYSTALLINE SILICON INGOT
Document Type and Number:
WIPO Patent Application WO/2011/118773
Kind Code:
A1
Abstract:
In a manufacturing method for a polycrystalline silicon ingot, a silicon melt is unidirectionally solidified in an upward direction from the bottom of a crucible. Silica is disposed in the bottom of a crucible, and using the bottom of the crucible as a base, the solidification process which occurs in the crucible is classified in three regions: a first region from 0 mm to height X (10 mm≤X<30 mm); a second region from height X to height Y (30 mm≤Y<100 mm); and a third region from at least height Y. The solidification rate (V1) in the first region is set in the range 10 mm/h≤V1≤20 mm/h, and the solidification rate (V2) in the second region is set in the range 1 mm/h≤V2≤ 5mm/h. Disclosed are a manufacturing method for a polycrystalline silicon ingot, and a polycrystalline silicon ingot in which many crystals in the (001), (111) orientation are present, in the base of which few parts have a high oxygen concentration, and which can significantly improve the production yield of polycrystalline silicon as a product.
Inventors:
TSUZUKIHASHI KOJI (JP)
IKEDA HIROSHI (JP)
KANAI MASAHIRO (JP)
WAKITA SABURO (JP)
IKEDA HIROSHI (JP)
KANAI MASAHIRO (JP)
WAKITA SABURO (JP)
Application Number:
PCT/JP2011/057361
Publication Date:
September 29, 2011
Filing Date:
March 25, 2011
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
MITSUBISHI MAT ELECT CHEM CO (JP)
TSUZUKIHASHI KOJI (JP)
IKEDA HIROSHI (JP)
KANAI MASAHIRO (JP)
WAKITA SABURO (JP)
MITSUBISHI MAT ELECT CHEM CO (JP)
TSUZUKIHASHI KOJI (JP)
IKEDA HIROSHI (JP)
KANAI MASAHIRO (JP)
WAKITA SABURO (JP)
International Classes:
C01B33/02; B22D27/04; C30B29/06
Foreign References:
| JP2004196577A | 2004-07-15 | |||
| JP2001198648A | 2001-07-24 | |||
| JP2006273628A | 2006-10-12 |
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
Masatake Shiga (JP)
Masatake Shiga (JP)
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Claims: