MANUFACTURING METHOD FOR AND REUSE METHOD OF ETCHING RATE TEST CONTROL WAFER

WIPO Patent Application WO/2016/026174

A1

A manufacturing method for and a reuse method of an etching rate test control wafer. The reuse method of the etching rate test control wafer comprises the following steps: step 10: providing an already-used etching rate test control wafer; step 20: completely removing a photoresist layer (4); step 30: coating a non-metallic film (3) with another photoresist layer (4'), deviating an exposure position from the etched test via hole (31) to expose the another photoresist layer (4'); step 40: measuring the thickness H1 of the non-metallic film (3) not covered by the another photoresist layer (4'); step 50: etching for a certain period of time T the nonmetallic film (3) not covered by the another photoresist layer (4'), so as to form another test via hole (32); and step 60: upon the completion of the etching process, measuring the thickness H2 of the non-metallic film (3) under the another test via hole (32), and calculating an etching rate V according to the thicknesses H1 and H2 and the etching time T of the nonmetallic film (3).

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GAO DONGZI (CN)

PCT/CN2014/086255

February 25, 2016

September 11, 2014

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SHENZHEN CHINA STAR OPTOELECT (CN)

G03F7/42; G03F7/20

CN103885281A	2014-06-25
US20040131976A1	2004-07-08
KR20020002051A	2002-01-09
CN102420183A	2012-04-18
CN102832103A	2012-12-19

COMIPS INTELLECTUAL PROPERTY OFFICE (CN)
深圳市德力知识产权代理事务所 (CN)

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