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Title:
MANUFACTURING METHOD FOR SENSOR ELEMENT EQUIPPED WITH PZT FILM
Document Type and Number:
WIPO Patent Application WO/2011/111732
Kind Code:
A1
Abstract:
Disclosed is a manufacturing method for a sensor element equipped with a PZT film, that forms a good quality, and substantially homogenous PZT film. The method forms a lower electrode E0 on a surface of one side of an SOI substrate 31 having a thickness of 550 µm or more. A PZT film 37 is formed on the lower electrode E0 when the SOI substrate 31 is heated from a surface side of another side of the SOI substrate 31. A predetermined PZT film pattern 19 is formed by implementing an etching process on the PZT film 37. An upper electrode E1 is formed with a predetermined pattern that opposes the lower electrode E0 on the PZT film pattern 19. A polishing process is implemented on a surface of another side of the SOI substrate 31 thereby thinning the thickness of the SOI substrate 31 to a predetermined thickness to effectively develops a characteristic of the PZT film pattern 19. Thereafter, a flexible portion 11 is formed having flexibility by implementing an etching process on a surface of another side of the SOI substrate 31.

Inventors:
IMAMURA TETSUJI
TAMURA MASAHIDE
NAKANO TAKAYUKI
YANO HIDEKAZU
Application Number:
PCT/JP2011/055470
Publication Date:
September 15, 2011
Filing Date:
March 09, 2011
Export Citation:
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Assignee:
HOKURIKU ELECT IND (JP)
IMAMURA TETSUJI
TAMURA MASAHIDE
NAKANO TAKAYUKI
YANO HIDEKAZU
International Classes:
G01P9/04; H01L41/08; H01L41/18; H01L41/187; H01L41/22; H01L41/316; H01L41/332
Foreign References:
JP2009252790A2009-10-29
JP2009252786A2009-10-29
JP2005295250A2005-10-20
JP2009177736A2009-08-06
Attorney, Agent or Firm:
NISHIURA Tsuguharu (JP)
Tsugiharu Nishiura (JP)
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Claims: