Title:
MANUFACTURING METHOD FOR SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/185850
Kind Code:
A1
Abstract:
In the present invention, a silicon carbide substrate (2) is disposed such that a main surface thereof is parallel to a plurality of injection holes (8), arranged in a row, of a lateral CVD device. Source gas is supplied from the plurality of injection holes (8) to epitaxially grow a silicon carbide epitaxial growth layer (10) on the main surface of the silicon carbide substrate (2). The source gas supplied from the plurality of injection holes (8) is divided into a plurality of system lines, each of which is controlled by a separate mass flow controller (9a-9l). The flow rate of the source gas on the main surface of the silicon carbide substrate (2) is greater than 1m/sec.
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Inventors:
OHNO AKIHITO (JP)
Application Number:
PCT/JP2017/014130
Publication Date:
October 11, 2018
Filing Date:
April 04, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/205; C23C16/455; C30B29/36; H01L21/329; H01L21/336; H01L29/12; H01L29/78; H01L29/872
Foreign References:
| JP2013197507A | 2013-09-30 | |||
| JP2005235845A | 2005-09-02 |
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
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