Title:
MANUFACTURING METHOD OF SILICON CARBIDE EPITAXIAL SUBSTRATE, AND MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/039684
Kind Code:
A1
Abstract:
A first primary surface is the (000-1) plane or in a plane inclined at an angle of no more than 8° with respect to the (000-1) plane. The area of the substrate mounting surface is 697-1161 cm². Graphing a first value on the X axis and a second value on the Y axis, the first value and the second value belong to the hexagonal region defined in XY planar coordinates by a first coordinate, a second coordinate, a third coordinate, a fourth coordinate, a fifth coordinate, and a sixth coordinate. The first coordinate is (0.038, 0.0019), the second coordinate is (0.069, 0.0028), the third coordinate is (0.177, 0.0032), the fourth coordinate is (0.038, 0.0573), the fifth coordinate is (0.069, 0.0849) and the sixth coordinate is (0.177, 0.0964).
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Inventors:
MIYASE TAKAYA (JP)
WADA KEIJI (JP)
WADA KEIJI (JP)
Application Number:
PCT/JP2019/021964
Publication Date:
February 27, 2020
Filing Date:
June 03, 2019
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L21/205; C23C16/42; C30B25/20; C30B29/36; H01L21/336; H01L29/12; H01L29/78
Domestic Patent References:
| WO2018142744A1 | 2018-08-09 |
Foreign References:
| JP2017085169A | 2017-05-18 | |||
| JP2017145150A | 2017-08-24 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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