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Title:
MANUFACTURING METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/203904
Kind Code:
A1
Abstract:
In order to produce a MOS-type silicon carbide semiconductor device, a first heat treatment (oxynitriding) is performed (step (S3)) in an oxidizing atmosphere comprising an oxidized compound that contains nitrogen such as nitrous oxide or nitric monoxide, and a gate insulating film is subsequently formed on the front surface of a SiC epitaxial substrate by performing (step (S4)) a second heat treatment that includes hydrogen. Next, a gate electrode is formed (step (S5)), an inter-layer insulating film is formed (step (S6)), and a third heat treatment for thermal densification of the inter-layer insulating film is subsequently performed (step (S7)). Next, a contact metal is formed (step (8)) and a fourth heat treatment for forming a reaction layer of the contact metal and the silicon carbide semiconductor is subsequently performed (step (9)). The third and fourth heat treatments are performed under an inert gas atmosphere comprising a gas such as nitrogen, helium, or argon. Configuring in this manner makes it possible to provide a manufacturing method for a silicon carbide semiconductor device that exhibits normally-off characteristics and that is capable of reducing interface state density.

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Inventors:
MAKIFUCHI YOUICHI (JP)
OKAMOTO MITSUO (JP)
Application Number:
PCT/JP2014/066053
Publication Date:
December 24, 2014
Filing Date:
June 17, 2014
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L21/336; H01L21/20; H01L29/78
Foreign References:
JP2011199132A2011-10-06
JP2013045789A2013-03-04
JP2013004643A2013-01-07
JPH09199497A1997-07-31
JP2006196713A2006-07-27
JP2006210818A2006-08-10
JP2007242744A2007-09-20
Attorney, Agent or Firm:
SAKAI, AKINORI (JP)
Akinori Sakai (JP)
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