Title:
MANUFACTURING METHOD FOR SILICON NITRIDE FLUORESCENT SUBSTANCE USING METAL SILICON OXYNITRIDE FLUORESCENT SUBSTANCE, HALO-NITRIDE RED FLUORESCENT SUBSTANCE, MANUFACTURING METHOD FOR SAME AND LIGHT EMITTING ELEMENT COMPRISING SAME
Document Type and Number:
WIPO Patent Application WO/2012/165906
Kind Code:
A3
Abstract:
The present invention relates to a manufacturing method for a silicon nitride fluorescent substance, a halo-nitride red fluorescent substance, a manufacturing method for the same and a light emitting element comprising same, and more specifically relates to a manufacturing method for a silicon nitride fluorescent substance in which carbon is added to a conventional metal silicon oxynitride fluorescent substance, a halo-nitride red fluorescent substance which is manufactured by using Europium, as an activator, and a halogenated metal, in a nitride-based host material containing an alkali earth metal, a manufacturing method for the same and a light emitting element comprising the same. Furthermore, the silicon nitride fluorescent substance manufacturing method according to the present invention enables a silicon nitride fluorescent substance having excellent properties to be manufactured in relatively low temperatures and normal pressure conditions by using a conventional metal silicon oxynitride fluorescent substance, and the silicon nitride fluorescent substance can be used as a material for the manufacture of a halo-nitride red fluorescent substance which undergoes an additional heat treatment process and thus has appropriately sized particles and improved surface properties.
Inventors:
KIM CHANG-HAE (KR)
CHAE HYE-WON (KR)
CHOI KANG-SIK (KR)
LEE JUNG-PYO (KR)
YOU HWA-SUNG (KR)
CHAE HYE-WON (KR)
CHOI KANG-SIK (KR)
LEE JUNG-PYO (KR)
YOU HWA-SUNG (KR)
Application Number:
PCT/KR2012/004354
Publication Date:
March 28, 2013
Filing Date:
June 01, 2012
Export Citation:
Assignee:
KOREA RES INST CHEM TECH (KR)
KIM CHANG-HAE (KR)
CHAE HYE-WON (KR)
CHOI KANG-SIK (KR)
LEE JUNG-PYO (KR)
YOU HWA-SUNG (KR)
KIM CHANG-HAE (KR)
CHAE HYE-WON (KR)
CHOI KANG-SIK (KR)
LEE JUNG-PYO (KR)
YOU HWA-SUNG (KR)
International Classes:
C09K11/55; C09K11/59; C09K11/77; H01L33/00
Domestic Patent References:
| WO2001040403A1 | 2001-06-07 |
Foreign References:
| KR100984273B1 | 2010-10-01 | |||
| US20100308712A1 | 2010-12-09 | |||
| US20060017041A1 | 2006-01-26 | |||
| KR20080056170A | 2008-06-20 | |||
| JP2010018771A | 2010-01-28 | |||
| KR20100128336A | 2010-12-07 |
Other References:
PIAO, XIANQING ET AL.: "Preparation of (Sr(1-x)Ca(x))2Si5N8/Eu2+ Solid Solutions and Their Luminescence Properties", J. ELECTROCHEM. SOC., vol. 153, no. 12, 20 October 2006 (2006-10-20), pages H232 - H235
PIAO, XIANQING ET AL.: "Characterization and luminescence properties of Sr2Si5N8:Eu2+ phosphor for white light-emitting-diode illumination", APPL. PHYS. LETT., vol. 88, no. 16, 18 April 2006 (2006-04-18), pages 161908
HORIKAWA, TAKASHI ET AL.: "Structure and Photoluminescence Properties of M(II)M (III)Si4N7:Eu2+ (M(II) = Ca, Sr, Ba / M(III) = Sc, Y, La) Phosphors Prepared by Carbothermal Reduction and Nitridation", ECS J. SOLID STATE SCI. TECHNOL., vol. 1, no. 4, 24 August 2012 (2012-08-24), pages R113 - R118
PIAO, XIANQING ET AL.: "Characterization and luminescence properties of Sr2Si5N8:Eu2+ phosphor for white light-emitting-diode illumination", APPL. PHYS. LETT., vol. 88, no. 16, 18 April 2006 (2006-04-18), pages 161908
HORIKAWA, TAKASHI ET AL.: "Structure and Photoluminescence Properties of M(II)M (III)Si4N7:Eu2+ (M(II) = Ca, Sr, Ba / M(III) = Sc, Y, La) Phosphors Prepared by Carbothermal Reduction and Nitridation", ECS J. SOLID STATE SCI. TECHNOL., vol. 1, no. 4, 24 August 2012 (2012-08-24), pages R113 - R118
Attorney, Agent or Firm:
HANYANG PATENT FIRM (12 Nonhyenro38gil Gangnam-gu, Seoul 135-854, KR)
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