Title:
MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND ARRAY SUBSTRATE AND CORRESPONDING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2016/074349
Kind Code:
A1
Abstract:
Disclosed are a manufacturing method of a thin film transistor and a corresponding apparatus. In a manufacturing process of the thin film transistor, after patterns of an active layer (02), a source electrode (03) and a drain electrode (04) in the thin film transistor are formed, a base substrate is annealed, so that ionic heat of the source electrode (03) and drain electrode (04) in ohmic contact positions between the active layer (02) and the source electrode (03) and the drain electrode (04) is dissipated to the active layer (02), so that the active layer (02) has ions of the source electrode (03) and drain electrode (04), components of the active layer (02) are further changed, the resistance in the ohmic contact positions between the active layer (02) and the source electrode (03) and the drain electrode (04) is decreased, and the uniformity and reliability of the thin film transistor are guaranteed. Moreover, compared with plasma treatment, annealing treatment is relatively simple, the complexity of the manufacturing process of the entire thin film transistor is not increased, and the production efficiency of the thin film transistor is guaranteed.
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Inventors:
YOO SEONGYEOL (CN)
SONG YOUNGSUK (CN)
KIM HEECHEOL (CN)
CHOI SEUNGJIN (CN)
SONG YOUNGSUK (CN)
KIM HEECHEOL (CN)
CHOI SEUNGJIN (CN)
Application Number:
PCT/CN2015/071977
Publication Date:
May 19, 2016
Filing Date:
January 30, 2015
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
International Classes:
H01L21/34; H01L21/477; H01L21/82; H01L27/02; H01L29/786
Foreign References:
| CN103050412A | 2013-04-17 | |||
| CN103000530A | 2013-03-27 | |||
| CN103730346A | 2014-04-16 | |||
| CN102683423A | 2012-09-19 |
Attorney, Agent or Firm:
CHINA PATENT AGENT (H.K.) LTD. (CN)
中国专利代理(香港)有限公司 (CN)
中国专利代理(香港)有限公司 (CN)
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