Title:
MANUFACTURING METHOD OF THIN FILM TRANSISTOR, ARRAY SUBSTRATE, AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/126636
Kind Code:
A1
Abstract:
Provided is a manufacturing method of a thin film transistor, an array substrate, and a display device. The method comprises: forming a semiconductor layer (2) on a base substrate (1) (S1); and forming a gate electrode (3) on the semiconductor layer (2) (S3). The method further comprises: forming a shield on the gate electrode (3) (S5), wherein a vertical projection of the shield (4) onto the base substrate (1) covers a first source electrode portion (211) of a source electrode region and a first drain electrode portion (221) of a drain electrode region; and using the shield (4) as a mask, and injecting ions to the semiconductor layer (2) (S7), to form a first doped region in the first source electrode portion (211) and the first drain electrode portion (221), and form a second doped region in a second source electrode portion (212) of the source electrode region and a second drain electrode portion of the drain electrode region that are not covered by the vertical projection of the shield (4).
Inventors:
TIAN ZHENDONG (CN)
LIU HAN JUNG (CN)
GONG BING (CN)
JIA KAIFU (CN)
HU SHUANG (CN)
LIU HAN JUNG (CN)
GONG BING (CN)
JIA KAIFU (CN)
HU SHUANG (CN)
Application Number:
PCT/CN2017/092619
Publication Date:
July 12, 2018
Filing Date:
July 12, 2017
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
ORDOS YUANSHENG OPTOELECTRONICS CO LTD (CN)
ORDOS YUANSHENG OPTOELECTRONICS CO LTD (CN)
International Classes:
H01L21/336; H01L27/12
Foreign References:
| CN106783626A | 2017-05-31 | |||
| CN106653862A | 2017-05-10 | |||
| CN101840865A | 2010-09-22 | |||
| CN1632681A | 2005-06-29 | |||
| US20060160283A1 | 2006-07-20 |
Attorney, Agent or Firm:
ZHONGZI LAW OFFICE (CN)
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