Title:
MANUFACTURING METHOD OF THIN FILM TRANSISTOR ARRAY SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2019/061711
Kind Code:
A1
Abstract:
A manufacturing method of a thin film transistor array substrate, the method comprising: depositing, before depositing an active metal layer, a first photoresist layer (206) on a substrate, exposing and developing the first photoresist layer, removing, by means of a lift-off process, the first photoresist layer and an active metal on a surface of a gate layer, such that the surface of the gate layer is not covered by the active metal, and enabling, by means of a predetermined process step, the active metal to undergo a chemical reaction with a portion of an active layer (203).
Inventors:
FANG CHUN-HSIUNG (CN)
LU PO-YEN (CN)
LU PO-YEN (CN)
Application Number:
PCT/CN2017/110200
Publication Date:
April 04, 2019
Filing Date:
November 09, 2017
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L27/12
Foreign References:
| CN102916014A | 2013-02-06 | |||
| US20100009481A1 | 2010-01-14 | |||
| CN105633096A | 2016-06-01 | |||
| CN104183602A | 2014-12-03 |
Attorney, Agent or Firm:
ESSEN PATENT & TRADEMARK AGENCY (CN)
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