Title:
MASK BLANK, METHOD FOR PRODUCING TRANSFER MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/186320
Kind Code:
A1
Abstract:
In the present invention, an etching stopper film (2), a light-blocking film (3) comprising a material containing one or more elements selected from among silicon and tantalum, and a hard mask film (4) are laminated in that order on a translucent substrate (1). The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atom% or more, the maximum peak in a N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and a Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a bond energy of 574 eV or less.
More Like This:
Inventors:
OHKUBO RYO (JP)
SHISHIDO HIROAKI (JP)
UCHIDA TAKASHI (JP)
SHISHIDO HIROAKI (JP)
UCHIDA TAKASHI (JP)
Application Number:
PCT/JP2018/014039
Publication Date:
October 11, 2018
Filing Date:
April 02, 2018
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/80; G03F1/00; H01L21/3065
Domestic Patent References:
| WO2017141605A1 | 2017-08-24 |
Foreign References:
| JP2015222448A | 2015-12-10 | |||
| JP2016188958A | 2016-11-04 | |||
| JPH05289305A | 1993-11-05 | |||
| JP2016191784A | 2016-11-10 | |||
| JP2007241065A | 2007-09-20 | |||
| JP2016191872A | 2016-11-10 |
Attorney, Agent or Firm:
IKEDA, Noriyasu et al. (JP)
Download PDF: