Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
MASK BLANK, PHASE SHIFT MASK, METHOD FOR MANUFACTURING PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/037864
Kind Code:
A1
Abstract:
It tends to be difficult to create a phase shift film having a transmittance of 20% or more from a single layer phase shift film made of silicon nitride material; as such, provided is a mask blank including a phase shift film having a transmittance of 20% or more created from two or more sets of laminate structures, each set consisting of a low-permeability layer and a high-permeability layer disposed in order from a translucent substrate side. The mask blank includes the phase shift film disposed on the translucent substrate, the phase shift film having a function for transmitting exposure light from an ArF excimer laser at a transmittance of 20% or more. The phase shift film has two or more sets of laminate structures, each set consisting of a low-permeability layer and a high-permeability layer. The low-permeability layer is made of the silicon nitride material and the high-permeability layer is made of silicon oxide material. The thickness of the high-permeability layer provided at the uppermost level is greater than the thickness of a high-permeability layer provided at a level excluding the upper most level. The thickness of the low-permeability layer is greater than the thickness of a high-permeability layer provided at a level excluding the uppermost level.

More Like This:
JP2003344989METHOD FOR PRODUCING PHOTOMASK BLANK
JP2007114536PHOTOMASK, METHOD FOR MANUFACTURING THE SAME, AND PATTERN TRANSFER METHOD
JP4262091A method for forming a pattern on a semiconductor wafer with an attenuation phase shift reflection mask
Inventors:
IWASHITA HIROYUKI (JP)
MATSUMOTO ATSUSHI (JP)
NOZAWA OSAMU (JP)
Application Number:
PCT/JP2017/028045
Publication Date:
March 01, 2018
Filing Date:
August 02, 2017
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/32; G03F1/26; G03F1/58; H01L21/3065
Foreign References:
JP2016018192A2016-02-01
JP2014197190A2014-10-16
JP2014137388A2014-07-28
US20060121361A12006-06-08
JP2005128278A2005-05-19
JP2004062135A2004-02-26
JP2002296758A2002-10-09
JPH08262688A1996-10-11
Attorney, Agent or Firm:
NAGATA, Yutaka et al. (JP)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: MASK BLANK, TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Next Patent: CAN LID