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Patent Searching and Data


Title:
MASK BLANK, PHASE SHIFT MASK AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/230233
Kind Code:
A1
Abstract:
This mask blank (100) has a structure wherein a phase shift film (2) and a light-blocking film (3) are sequentially laminated in this order on a light-transmitting substrate (1). The optical density of the multilayer structure composed of the phase shift film and the light-blocking film with respect to exposure light, which is an ArF excimer laser, is 3.5 or more; and the light-blocking film has a structure wherein a lower layer (31) and an upper layer (32) are laminated sequentially from the light-transmitting substrate side. The lower layer is formed from a material wherein the total content of chromium, oxygen, nitrogen and carbon is 90% by atom or more; and the upper layer is formed from a material wherein the total content of metals and silicon is 80% by atom or more. The extinction coefficient kU of the upper layer for the exposure light is higher than the extinction coefficient kL of the lower layer for the exposure light.

Inventors:
HASHIMOTO MASAHIRO (JP)
SHISHIDO HIROAKI (JP)
Application Number:
PCT/JP2018/018872
Publication Date:
December 20, 2018
Filing Date:
May 16, 2018
Export Citation:
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Assignee:
HOYA CORP (JP)
International Classes:
G03F1/32; G03F1/58; G03F7/20
Foreign References:
JP2006146151A2006-06-08
JP2016191877A2016-11-10
JP2015111212A2015-06-18
JP2015184672A2015-10-22
JP2009265508A2009-11-12
JP2017033016A2017-02-09
JP2007241137A2007-09-20
JP2007241065A2007-09-20
Attorney, Agent or Firm:
IKEDA, Noriyasu et al. (JP)
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