Title:
MASK BLANK, PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/102990
Kind Code:
A1
Abstract:
The present invention provides a mask blank equipped with a phase shift film that has both the function for transmitting ArF exposure light at a prescribed transmittance and the function for creating a prescribed phase difference, and that is capable of preventing positional displacement of a pattern caused by thermal expansion. The phase shift film has the function for transmitting exposure light from an ArF excimer laser at a transmittance of 15% or greater and the function for creating a phase difference between 150° and 200°, and is formed of a material containing nonmetallic elements and silicon. The first layer is kept in contact with the surface of a transmissive substrate. The phase shift film satisfies the following relationships:
n1 < n2, n2 > n3, and
k1 > k2 > k3
Where n1, n2, n3 each represents a refractive index for the wavelength of exposure light in the first layer, the second layer, and the third layer, respectively, and k1, k2, k3 each represents an extinction coefficient for the wavelength of exposure light in the first layer, the second layer, and the third layer, respectively.
More Like This:
Inventors:
NOZAWA OSAMU (JP)
HORIGOME YASUTAKA (JP)
MAEDA HITOSHI (JP)
HORIGOME YASUTAKA (JP)
MAEDA HITOSHI (JP)
Application Number:
PCT/JP2018/042813
Publication Date:
May 31, 2019
Filing Date:
November 20, 2018
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/32; C23C14/08; G03F7/20
Foreign References:
| JP2016191882A | 2016-11-10 | |||
| JP2014145920A | 2014-08-14 | |||
| JP2011095787A | 2011-05-12 | |||
| JP2004062135A | 2004-02-26 | |||
| JPH07134392A | 1995-05-23 |
Attorney, Agent or Firm:
NAGATA, Yutaka et al. (JP)
Download PDF: