Title:
MASK BLANK, PHASE SHIFT MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/176481
Kind Code:
A1
Abstract:
Provided is a mask blank for a phase shift mask comprising an etching stopper film having a high transmittance of at least 80% with respect to ArF exposure light and with which a transmittance difference of 5% or more can be obtained in a translucent section. The mask blank comprises a structure in which an etching stopper film and a phase shift film are layered in this order on a translucent substrate, the mask blank being characterized in that: the phase shift film is composed of a material containing silicon and oxygen; the phase shift film has a refractive index n1 of 1.5 or higher with respect to 193nm wavelength light, and an extinction coefficient k1 of 0.1 or lower with respect to 193nm wavelength light; the etching stopper film has a refractive index n of 2.5 to 3.1 with respect to 193nm wavelength light, and an extinction coefficient k2 of 0.4 or lower with respect to 193nm wavelength light; and a refractive index n2 and the extinction coefficient k2 satisfy at least one condition from among (condition 1) to (condition 5).
Inventors:
SHISHIDO HIROAKI (JP)
TANIGUCHI KAZUTAKE (JP)
TANIGUCHI KAZUTAKE (JP)
Application Number:
PCT/JP2019/006251
Publication Date:
September 19, 2019
Filing Date:
February 20, 2019
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/34; C23C14/06; H01L21/3065
Foreign References:
| JP2017134424A | 2017-08-03 | |||
| JP2017223890A | 2017-12-21 | |||
| JP2001083687A | 2001-03-30 |
Attorney, Agent or Firm:
NAGATA, Yutaka et al. (JP)
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