Title:
MASK BLANK, PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/188397
Kind Code:
A1
Abstract:
A mask blank (100) is provided with a phase shift film (2) on a translucent substrate (1), wherein the phase shift film (2) includes a structure in which a bottom layer (21), a middle layer (22), and a top layer (23) are laminated in this order. The bottom layer (21) is formed of a silicon-nitride-based material, the middle layer (22) is formed of a silicon-oxynitride-based material, and the top layer (23) is formed of a silicon-oxide-based material. The nitrogen content of the bottom layer (21) is greater than those of the middle layer (22) and the top layer (23), and the oxygen content of the top layer (23) is greater than those of the middle layer (22) and the bottom layer (21). The ratio of the film thickness of the middle layer (22) with respect to the total film thickness of the phase shift film (2) is equal to or greater than 0.15, and the ratio of the film thickness of the top layer (21) with respect to the total film thickness of the phase shift film (2) is equal to or less than 0.10.
Inventors:
MAEDA HITOSHI (JP)
NOZAWA OSAMU (JP)
HORIGOME YASUTAKA (JP)
NOZAWA OSAMU (JP)
HORIGOME YASUTAKA (JP)
Application Number:
PCT/JP2019/010772
Publication Date:
October 03, 2019
Filing Date:
March 15, 2019
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/32; G03F1/58; G03F1/74
Domestic Patent References:
| WO2004059384A1 | 2004-07-15 | |||
| WO2016103843A1 | 2016-06-30 | |||
| WO2017010452A1 | 2017-01-19 |
Foreign References:
| JP2016035559A | 2016-03-17 | |||
| JP2016191872A | 2016-11-10 | |||
| JP2016191877A | 2016-11-10 |
Attorney, Agent or Firm:
IKEDA, Noriyasu et al. (JP)
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