Title:
MASK BLANK, PHASE SHIFT MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/037731
Kind Code:
A1
Abstract:
Provided are a mask blank, a phase shift mask, and a method for producing a semiconductor device, the mask blank being provided with a light-blocking film that has a desired light-blocking property and makes it possible to suppress an increase in film thickness and reduce a side etching amount caused in dry etching at the time of pattern formation, thereby making it possible to accurately form a fine pattern. This mask blank is provided with a light-blocking film on a light transmissive substrate. The light-blocking film comprises a material containing silicon and nitrogen, an inner region of the light-blocking film has, at a binding energy in a range greater than 100 eV but less than or equal to 101.5 eV, a maximum peak of an Si2p narrow spectrum obtained by analysis by X-ray photoelectron spectroscopy, and the inner region of the light-blocking film is a region other than a back surface-side region on the light transmissive substrate side and a front surface-side region on the reverse side from the light transmissive substrate.
Inventors:
TSUKAGOSHI KENTA (JP)
NOZAWA OSAMU (JP)
OHKUBO RYO (JP)
MAEDA HITOSHI (JP)
NOZAWA OSAMU (JP)
OHKUBO RYO (JP)
MAEDA HITOSHI (JP)
Application Number:
PCT/JP2022/026236
Publication Date:
March 16, 2023
Filing Date:
June 30, 2022
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/26; G03F1/30; G03F1/54
Domestic Patent References:
| WO2018221201A1 | 2018-12-06 | |||
| WO2018100958A1 | 2018-06-07 | |||
| WO2017141605A1 | 2017-08-24 |
Foreign References:
| JP2019191603A | 2019-10-31 | |||
| JP2012003255A | 2012-01-05 | |||
| JP2022118977A | 2022-08-16 |
Attorney, Agent or Firm:
NAGATA, Yutaka et al. (JP)
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