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Title:
MASK BLANK SUBSTRATE MANUFACTURING METHOD, MASK BLANK MANUFACTURING METHOD, TRANSFER MASK MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, MASK BLANK SUBSTRATE, MASK BLANK, AND TRANSFER MASK
Document Type and Number:
WIPO Patent Application WO/2018/020994
Kind Code:
A1
Abstract:
The present invention provides a mask blank substrate, a mask blank, and a transfer mask that enable deterrence of focus error even when a transfer mask having relatively sparse transfer patterns is manufactured without using a high-spec mask blank substrate and exposure transfer is performed on a resist film on a wafer by setting the transfer mask on a mask stage of a high NA exposure device. The present invention also provides methods for manufacturing the mask blank substrate, the mask blank, and the transfer mask. According to the present invention: a square calculation area (TA) is set on the main surface (P) of a substrate; specific points (A-D) are set at the corners of the calculation area (TA); the heights of the specific points (A-D) from a reference plane are acquired; a virtual plane passing through three of the specific points (A-D) is set; a point of intersection between the virtual plane and a perpendicular line that passes the remaining one of the specific points and that is perpendicular to the reference plane is set; the distance between the remaining one of the specific points and the point of intersection is calculated; and a substrate in which the distance is preset and which satisfies a reference is selected as a mask blank substrate.

Inventors:
TANABE MASARU (JP)
Application Number:
PCT/JP2017/025096
Publication Date:
February 01, 2018
Filing Date:
July 10, 2017
Export Citation:
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Assignee:
HOYA CORP (JP)
International Classes:
G03F1/60; G03F1/32; G03F1/50
Foreign References:
JP2014149351A2014-08-21
JP2014038333A2014-02-27
JP2012185505A2012-09-27
JP2014209200A2014-11-06
JP2010078769A2010-04-08
JP2011141536A2011-07-21
JP2012208509A2012-10-25
JP2012256066A2012-12-27
Attorney, Agent or Firm:
NAGATA, Yutaka et al. (JP)
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