MASK BLANK, MASK FOR TRANSFER, METHOD FOR MANUFACTURING MASK FOR TRANSFER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2018/100958

A1

Provided is a mask blank of which the correction rate of EB defect correction is sufficiently fast even when a thin film for forming a transfer pattern is formed with an SiN material, and the ratio of correction rate for EB defect correction between a translucent substrate and itself is sufficiently high. A mask blank provided with a thin film for forming, on a translucent substrate, a transfer pattern formed with a material containing silicon and nitrogen, characterized in that when X-ray photoelectron spectrometry is performed on a plurality of measurement spots in an internal area of the thin film except a near-field area and a surface area to acquire an average value PSi_fi_av of the maximum peak PSi_fi of photoelectron intensity of an Si2p narrow spectrum, and X-ray photoelectron spectrometry is performed on a plurality of measurement spots of the translucent substrate to acquire an average value PSi_sb_av of the maximum peak PSi_sb of photoelectron intensity of an Si2p narrow spectrum, (PSi_fi_av)/(PSi_sb_av) is 1.08 or greater.

HASHIMOTO MASAHIRO (JP)
UCHIDA MARIKO (SG)
KAWASUMI ISAO (SG)

PCT/JP2017/039518

June 07, 2018

November 01, 2017

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HOYA CORP (JP)
HOYA ELECTRONICS SINGAPORE PTE LTD (SG)

G03F1/54; G03F1/32; G03F1/72; H01L21/3065

WO2016147518A1

2016-09-22

JP2016191863A	2016-11-10
JP2016189002A	2016-11-04
JP2016018192A	2016-02-01
JP2015026059A	2015-02-05
JPH08220731A	1996-08-30

NAGATA, Yutaka et al. (JP)

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