Title:
MASK BLANK, TRANSFER MASK, METHOD FOR PRODUCING TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/020913
Kind Code:
A1
Abstract:
This mask blank is provided with a light blocking film on a light transmitting substrate. The light blocking film has an optical density of 2.5 or more with respect to ArF excimer laser exposure light, and has a structure that comprises three or more multilayer structures, each of which is composed of a high nitride layer and a low nitride layer. The high nitride layer and the low nitride layer are formed from a material that is composed of silicon and nitrogen or a material that contains one or more elements selected from among semimetal elements and non-metal elements in addition to silicon and nitrogen. The high nitride layer has a nitrogen content of 50 atom% or more, and has a thickness of 10 nm or more. The low nitride layer has a nitrogen content of less than 50 atom%, and has a thickness that is not less than twice the thickness of the high nitride layer.
Inventors:
SHISHIDO HIROAKI (JP)
HORIGOME YASUTAKA (JP)
HORIGOME YASUTAKA (JP)
Application Number:
PCT/JP2017/022984
Publication Date:
February 01, 2018
Filing Date:
June 22, 2017
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/58; G03F1/78; H01L21/3065
Foreign References:
| JP2016020950A | 2016-02-04 | |||
| JP2016018192A | 2016-02-01 | |||
| JP2016020949A | 2016-02-04 | |||
| JP2015008283A | 2015-01-15 | |||
| JP2011150202A | 2011-08-04 | |||
| JP2003322948A | 2003-11-14 |
Attorney, Agent or Firm:
IKEDA, Noriyasu et al. (JP)
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