Title:
MASK AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2019/200723
Kind Code:
A1
Abstract:
Provided are a mask and a method for manufacturing same. The mask comprises: a substrate having a first surface and a second surface, which are opposite each other, the substrate being provided with multiple openings running therethrough, and the material of the substrate being a material on which a semiconductor etching process can be performed; a mask pattern layer located on the first surface, the material of the mask pattern layer being a material on which a semiconductor etching process can be performed, wherein the mask pattern layer has pattern areas and shielding areas, each of the pattern areas has at least one through hole, the openings expose the pattern areas, each of the openings is opposite one of the pattern areas and exposes all the through holes in the pattern area, and the shielding areas are located at outer sides of the pattern areas and opposite the substrate; and a top substrate layer located on a surface, opposite the first surface, of the mask pattern layer, wherein the top substrate layer is provided with multiple trenches running therethrough, the trenches expose the pattern areas, and each of the trenches is opposite one of the pattern areas and exposes all the through holes in the pattern area.
Inventors:
LIU MENGBIN (CN)
LUO HAILONG (CN)
LUO HAILONG (CN)
Application Number:
PCT/CN2018/094246
Publication Date:
October 24, 2019
Filing Date:
July 03, 2018
Export Citation:
Assignee:
NINGBO SEMICONDUCTOR INT CORP (CN)
International Classes:
C23C14/04; H01L51/50
Foreign References:
| JP2003100583A | 2003-04-04 | |||
| US20030031939A1 | 2003-02-13 | |||
| US5569569A | 1996-10-29 | |||
| KR20010047178A | 2001-06-15 | |||
| CN107541698A | 2018-01-05 |
Attorney, Agent or Firm:
P. C. & ASSOCIATES (CN)
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