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Patent Searching and Data


Title:
MASK PLATE, ALIGNMENT MARK AND PHOTOLITHOGRAPHY SYSTEM
Document Type and Number:
WIPO Patent Application WO/2022/193151
Kind Code:
A1
Abstract:
A mask plate, an alignment mark and a photolithography system. The alignment mark comprises a plurality of alignment patterns arranged at intervals, wherein each alignment pattern comprises a first pattern extending in a first direction and a second pattern extending in a second direction. In the first direction, the first pattern comprises a first end and a second end, which are opposite each other; and in the second direction, the second pattern comprises a third end and a fourth end, which are opposite each other, wherein the second end is connected to the third end, and the fourth end is connected to the first end. The alignment patterns are two-dimensional linear patterns. Comparing the embodiments of the present invention and a case where the alignment mark is a one-dimensional linear pattern, during the process of performing alignment by using the alignment mark provided by the embodiments of the present invention, the alignment mark macroscopically constitutes moiré patterns which are arranged periodically, the moiré patterns enable an alignment system to obtain a greater first-order diffraction signal strength, and a corresponding alignment signal strength is greater, thereby improving the overlay (OVL) accuracy and reducing the rework rate and production costs.

Inventors:
SANG WEIHUA (CN)
WU SHIJIE (CN)
XING BIN (CN)
Application Number:
PCT/CN2021/081169
Publication Date:
September 22, 2022
Filing Date:
March 16, 2021
Export Citation:
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Assignee:
SEMICONDUCTOR MFG INT SHANGHAI CORP (CN)
SEMICONDUCTOR MFG INT BEIJING CORP (CN)
International Classes:
G03F9/00; G03B27/32; G03F7/20
Foreign References:
US20090195768A12009-08-06
CN110534501A2019-12-03
CN111381460A2020-07-07
CN101140422A2008-03-12
CN101251724A2008-08-27
Attorney, Agent or Firm:
INTEBRIGHT LLP (CN)
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