Title:
MASK AND MASK PREPARATION METHOD
Document Type and Number:
WIPO Patent Application WO/2021/036301
Kind Code:
A1
Abstract:
A mask (1) comprises an opening area (M1), the opening area (M1) comprising an opening pattern; a shielding area (M2) adjacent to the opening area (M1), the shielding area (M2) comprising a buffer pattern adapted to the opening pattern. The embodiments achieve the purpose of buffering the sudden change of stress at the boundary line of the opening area (M1) and the shielding area (M2), and furthermore ensure that the tension of the mesh opening can be smoothly transferred from the shielding area (M2) to the opening area (M1). In addition, the invention can effectively improve the precision of the mesh opening of the mask (1), thus improving the vapor deposition product yield.
Inventors:
SUN LIN (CN)
ZHAO JINGJING (CN)
LIU MINGXING (CN)
ZHAO JINGJING (CN)
LIU MINGXING (CN)
Application Number:
PCT/CN2020/086112
Publication Date:
March 04, 2021
Filing Date:
April 22, 2020
Export Citation:
Assignee:
KUNSHAN GOVISIONOX OPTOELECTRONICS CO LTD (CN)
International Classes:
C23C14/24; C23C14/04
Foreign References:
| CN110396660A | 2019-11-01 | |||
| CN107815641A | 2018-03-20 | |||
| CN107815641A | 2018-03-20 | |||
| CN107435131A | 2017-12-05 | |||
| CN105803389A | 2016-07-27 | |||
| CN107460436A | 2017-12-12 | |||
| US7704326B2 | 2010-04-27 |
Attorney, Agent or Firm:
BEIJING BRIGHT IP AGENCY CO., LTD. (CN)
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