Title:
MASK FOR STITCHING EXPOSURE
Document Type and Number:
WIPO Patent Application WO/2023/058929
Kind Code:
A1
Abstract:
A method for forming a line and a space pattern, according to one embodiment of the present invention, comprises exposing a mask in a first direction and a second direction on a substrate and stitching same. The method for forming a line and a space pattern comprises the steps of: performing first exposure on the substrate so that first shots of the mask come in contact with each other in the first direction; and performing second exposure on the substrate so that second shots of the mask come in contact with each other so as to be distanced in the second direction and be offset with respect to the first shots in the first direction.
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Inventors:
SONG JUNGCHUL (KR)
OH JAE-SUB (KR)
PARK MIN JUN (KR)
CHO HUI JAE (KR)
KIM KWANG HEE (KR)
HAN CHANG HEE (KR)
OH JAE-SUB (KR)
PARK MIN JUN (KR)
CHO HUI JAE (KR)
KIM KWANG HEE (KR)
HAN CHANG HEE (KR)
Application Number:
PCT/KR2022/013889
Publication Date:
April 13, 2023
Filing Date:
September 16, 2022
Export Citation:
Assignee:
KOREA ADVANCED INST SCI & TECH (KR)
International Classes:
G03F1/36; G03F7/20
Foreign References:
| KR20150114371A | 2015-10-12 | |||
| KR20070052035A | 2007-05-21 | |||
| KR20170131766A | 2017-11-30 | |||
| KR20180008295A | 2018-01-24 | |||
| KR20140021246A | 2014-02-20 |
Attorney, Agent or Firm:
NURY PATENT LAW FIRM (KR)
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