Title:
MASS FLOW RATE CONTROL SYSTEM, AND SEMICONDUCTOR MANUFACTURING DEVICE AND VAPORIZER INCLUDING SAID SYSTEM
Document Type and Number:
WIPO Patent Application WO/2019/065611
Kind Code:
A1
Abstract:
This mass flow rate control system is configured to control the flow rate of a fluid flowing through a flow passage and includes a first device, which is a mass flow rate control device, an external sensor, which is at least one detecting means constituting a second device that is a device installed outside the first device, and at least one control unit provided in a casing of either one or both of the first device and the second device, wherein the control unit is configured to be capable of controlling a degree of opening of a flow rate control valve on the basis of at least an external signal, which is a detection signal output from the external sensor. By this means, advantages such as rapid purge processing, more accurate flow rate control, simple flow rate calibration, flow rate control based on a pressure or temperature inside a tank, or flow rate control based on the concentration of a material in the fluid can be achieved without the addition of a separate control device or the like.
Inventors:
ISHII MAMORU (JP)
Application Number:
PCT/JP2018/035403
Publication Date:
April 04, 2019
Filing Date:
September 25, 2018
Export Citation:
Assignee:
HITACHI METALS LTD (JP)
International Classes:
G05D7/06
Foreign References:
| JPH08203832A | 1996-08-09 | |||
| JPH02268826A | 1990-11-02 | |||
| JPH05104050A | 1993-04-27 | |||
| JPH05233069A | 1993-09-10 |
Attorney, Agent or Firm:
PROSPEC PATENT FIRM (JP)
Download PDF:
Previous Patent: INFORMATION PROCESSING DEVICE, CONTROL METHOD AND PROGRAM
Next Patent: FOUNDATION STRUCTURE FOR DRY BLOCK RETAINING WALL
Next Patent: FOUNDATION STRUCTURE FOR DRY BLOCK RETAINING WALL