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Title:
MASTER ALLOY FOR SPUTTERING TARGET AND METHOD FOR MANUFACTURING SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2016/052371
Kind Code:
A1
Abstract:
Provided is a master alloy for a sputtering target, such master alloy being characterized in that, if the elements constituting the master alloy are X1, X2, Y1, Y2, and Y3 as defined hereinafter, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the abovementioned constituent elements, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb, or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V. Because of this configuration, the master alloy exhibits the outstanding effects that a target with few defects, high density, and a uniform alloy composition can be obtained and, through the use of this target, a sintered sputtering target can be provided with which it is possible to form at high speed an alloy barrier film with uniform quality and few particles.

Inventors:
ASANO TAKAYUKI (JP)
ODA KUNIHIRO (JP)
Application Number:
PCT/JP2015/077249
Publication Date:
April 07, 2016
Filing Date:
September 28, 2015
Export Citation:
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Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C23C14/34; C22C5/04; C22C14/00; C22C19/03; C22C19/07; C22C22/00; C22C27/00; C22C27/02; C22C27/04; C22C27/06
Domestic Patent References:
WO2002021524A12002-03-14
Foreign References:
JPH0565629A1993-03-19
JP2006331619A2006-12-07
Attorney, Agent or Firm:
OGOSHI Isamu et al. (JP)
Isamu Ogoshi (JP)
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